Loic THEOLIER

Associate Professor

Research group : RELIABILITY

Team : RIAD,WBG

Tel : 0540002813

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Article (13)

Electro-thermo-mechanical modelling of a SiC MOSFET transistor under non-destructive short-circuit Author(s): Florent Loche-Moinet, Loïc Théolier, Eric Woirgard Year of publication: 2023 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2023.115143 HAL link: https://hal.science/hal-04263300v1
Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses Author(s): Omar Chihani, Loïc Théolier, Alain Bensoussan, Jean-Yves Delétage, André Durier, Eric Woirgard Year of publication: 2018 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2018.07.076 HAL link: https://hal.science/hal-02499971v1
Thermo-Mechanical Reliability Assessment of AlN Power Substrates Subjected to Severe Aging Tests Author(s): Faical Arabi, Loic Theolier, Donatien Martineau, J.-Y. Delétage, Mathieu Médina, Eric Woirgard Year of publication: 2017 Journal: Materials Focus DOI: 10.1166/mat.2017.1413 HAL link: https://hal.science/hal-01662917v1
Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling Author(s): Wissam Sabbah, Faical Arabi, Oriol Aviño Salvado, Cyril Buttay, Loic Théolier, Hervé Morel Year of publication: 2017 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2017.06.091 HAL link: https://hal.science/hal-01562549v1
Power electronic assemblies: Thermo-mechanical degradations of gold-tin solder for attaching devices Author(s): Faical Arabi, Loic Theolier, Donatien Martineau, J.-Y. Delétage, Mathieu Médina, Eric Woirgard Year of publication: 2016 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2016.07.028 HAL link: https://hal.science/hal-01662946v1
Mechanical stress investigation after technological process in Deep Trench Termination DT2 using BenzoCycloButene as dielectric material Author(s): H. Arbess, F. Baccar, L. Theolier, S. Azzopardi, E. Woirgard Year of publication: 2015 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2015.07.019 HAL link: https://hal.science/hal-02500148v1
Ageing mechanisms in Deep Trench Termination (DT2) Diode Author(s): F. Baccar, H. Arbess, L. Theolier, S. Azzopardi, E. Woirgard Year of publication: 2015 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2015.06.132 HAL link: https://hal.science/hal-02500141v1
Identification and analysis of power substrates degradations subjected to severe aging tests Author(s): Eric Woirgard, Faical Arabi, Wissam Sabbah, Donatien Martineau, Loic Theolier, Stéphane Azzopardi Year of publication: 2015 Journal: Microelectronics Reliability DOI: 10.1016/j.microrel.2015.06.048 HAL link: https://hal.science/hal-01662947v1
Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach Author(s): Fédia Baccar, Stéphane Azzopardi, Loïc Théolier, Kamal El Boubkari, Jean-Yves Deletage, Eric Woirgard Year of publication: 2013 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00955719v1
Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance Author(s): Loïc Théolier, Hicham Mahfoz-Kotb, Karine Isoird, Frédéric Morancho Year of publication: 2010 Journal: European Journal of Electrical Engineering DOI: 10.3166/ejee.13.227-252 HAL link: https://hal.science/hal-00991584v1
A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene Author(s): Loïc Théolier, Hicham Mahfoz-Kotb, Karine Isoird, Frédéric Morancho, Sandrine Assié-Souleille, Nicolas Mauran Year of publication: 2009 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2009.2020348 HAL link: https://hal.science/hal-00991660v1
Filling of very deep, wide trenches by BenzoCycloButene polymer Author(s): Hicham Mahfoz-Kotb, Karine Isoird, Frédéric Morancho, Loïc Théolier, Thierry Do Conto Year of publication: 2009 Journal: Microsystem Technologies DOI: 10.1007/s00542-009-0894-2 HAL link: https://hal.science/hal-00991599v1
Switching performance of 65 V vertical N-channel FLYMOSFETs Author(s): Loïc Théolier, Karine Isoird, Henri Tranduc, Frédéric Morancho, Jaume Roig Guitart, Yann Weber, Evgueniy Stefanov, Jean-Michel Reynes Year of publication: 2008 Journal: Microelectronics Journal DOI: 10.1016/j.mejo.2007.11.009 HAL link: https://hal.science/hal-00991676v1

Special issue (1)

Mise en place d’une SAÉ de ventilation solaire autonome à base de panneaux photovoltaïques Author(s): Marouane Frini, Loïc Théolier, François Augereau, Marie Gueunier-Farret Year of publication: 2023 Journal: Journal sur l'enseignement des sciences et technologies de l'information et des systèmes DOI: 10.1051/j3ea/20231003 HAL link: https://hal.science/hal-04263307v1

Other publication (1)

Modélisation d'un court-circuit du composant à la cellule élémentaire Author(s): Florent Loche-Moinet, Loïc Théolier, Eric Woirgard Year of publication: 2024 Journal: DOI: HAL link: https://hal.science/hal-04993172v1

Thesis (1)

Conception de transistor MOS haute tension (1200 volts) pour l'électronique de puissance Author(s): Loïc Théolier Year of publication: 2008 Journal: DOI: HAL link: https://theses.hal.science/tel-00377784v1

Conference proceedings (36)

Characterization of the bulk moisture diffusion in epoxy-based potting compounds for IGBT semiconductor power modules Author(s): Ariane Tomas, Loic Théolier, Alexandrine Guédon-Gracia, Hélène Frémont, Pierre-Yves Pichon Year of publication: 2025 Journal: DOI: HAL link: https://hal.science/hal-05323088v1
Comparison of crack resistance of two SiC MOSFETs gate geometries under short-circuit by FE simulations Author(s): Florent Loche-Moinet, Loïc Théolier, Eric Woirgard Year of publication: 2024 Journal: DOI: 10.1109/EDTM58488.2024.10511839 HAL link: https://hal.science/hal-04993053v1
Multi-scale electro-thermo-mechanical simulation of a SiC MOSFET transitor during short-circuit Author(s): Florent Loche-Moinet, Loïc Théolier, Eric Woirgard Year of publication: 2023 Journal: DOI: 10.1109/EuroSimE56861.2023.10100834 HAL link: https://hal.science/hal-04263298v1
Electrical and thermo-mechanical study of a new design to improve the breakdown voltage of an Embedded power module Author(s): A. Tablati, Loïc Théolier, N. Alayli, Toni Youssef, Faical Arabi Year of publication: 2021 Journal: DOI: HAL link: https://hal.science/hal-03554208v1
Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs Author(s): Omar Chihani, Loïc Théolier, Jean-Yves Delétage, Eric Woirgard, Alain Bensoussan, André Durier Year of publication: 2018 Journal: DOI: 10.1109/irps.2018.8353685 HAL link: https://hal.science/hal-02500021v1
Initiation à la recherche sur la Fiabilité en microélectronique par la physique :Mini-projets en laboratoire Author(s): J-y Deletage, T. Dubois, G. Duchamp, L. Theolier, J-M Vinassa, E. Woirgard, H. Fremont, O. Briat, A. Guédon-Gracia Year of publication: 2018 Journal: DOI: HAL link: https://hal.science/hal-02516984v1
Initiation à la recherche sur la fiabilité en microélectronique par la physique : mini-projets en laboratoire Author(s): O. Briat, J.-Y. Delétage, T. Dubois, G. Duchamp, H. Frémont, A. Guédon-Gracia, L. Theolier, J.-M. Vinassa, E. Woirgard Year of publication: 2018 Journal: DOI: HAL link: https://hal.science/hal-02518400v1
L'effet de la température et de la tension sur des vieillissements HTRB et HTGB pour des HEMTs GaN de puissance Author(s): Omar Chihani, Loïc Théolier, Alain Bensoussan, Pierre Bondue, Jean-Yves Deletage, André Durier, Eric Woirgard Year of publication: 2018 Journal: DOI: HAL link: https://hal.science/hal-02981877v1
Apport de la simulation numérique dans l’analyse de défaillance Author(s): H. Frémont, Loïc Théolier Year of publication: 2018 Journal: DOI: HAL link: https://hal.science/hal-02517284v1
Effect of voids on crack propagation in AuSn die attach for high-temperature power modules Author(s): Faical Arabi, Loic Théolier, Toni Youssef, Mathieu Medina, Jean-Yves Deletage, Eric Woirgard Year of publication: 2017 Journal: DOI: 10.1109/EuroSimE.2017.7926230 HAL link: https://hal.science/hal-01662929v1
Tuteurs tuteurés : Le tutorat de première année, un enseignement par les élèves, pour les élèves Author(s): H. Frémont, F. Arnal, L. Theolier, M. Tarisien Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-02517268v1
Vieillissement et caractérisation de véhicules de tests de composants de puissance pour l’aéronautique Author(s): F. Arabi, M. Medina, L. Theolier Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-02518867v1
Failure mechanism study of gold-tin solder for attaching power electronic devices Author(s): Faical Arabi, Loïc Théolier, Donatien Martineau, Eric Woirgard Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-01663005v1
Évaluation des mécanismes de défaillance et de la fiabilité d’une nouvelle terminaison haute tension : approche expérimentale et modélisation associée Author(s): Loïc Théolier Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-02500358v1
Etude thermomécanique de la dégradation des assemblages de puissance soumis à des vieillissements à haute température Author(s): Faical Arabi, Loïc Théolier, Martineau D., Jean-Yves Deletage, Eric Woirgard Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-01361692v1
Évaluation des mécanismes de défaillance et de la fiabilité d’une nouvelle terminaison haute tension : approche expérimentale et modélisation associée Author(s): Loïc Théolier Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-02518858v1
New simulation method for Deep Trench Termination diode (DT2) using mixed-mode TCAD sentaurus Author(s): F. Baccar, H. Arbess, L. Theolier, S. Azzopardi, E. Woirgard Year of publication: 2015 Journal: DOI: 10.1109/EuroSimE.2015.7103122 HAL link: https://hal.science/hal-02500152v1
Electrical Characteristics Evolution of the Deep Trench Termination Diode Based on a Finite Elements Simulation Approach Author(s): Fédia Baccar, François Le Henaff, Loïc Théolier, Stephane Azzopardi, Eric Woirgard Year of publication: 2014 Journal: DOI: 10.1109/EuroSimE.2014.6813814 HAL link: https://hal.science/hal-01017506v1
Fiabilité d'une diode DT2 reportée sur un substrat DBC par frittage de pâte d'argent Author(s): Fédia Baccar, Loïc Théolier, Stephane Azzopardi, François Le Henaff, Jean-Yves Delétage, Eric Woirgard Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01017558v1
Silver sintering wire-bonding less power module for high temperature applications Author(s): Francois Le Henaff, Stephane Azzopardi, Loïc Théolier, Jean-Yves Deletage, Eric Woirgard, Serge Bontemps, Julien Joguet Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01065293v1
Fiabilité d'une diode DT2 reportée sur un substrat DBC par frittage de pâte d'argent Author(s): Fédia Baccar, Loïc Théolier, Stephane Azzopardi, Francois Le Henaff, Jean-Yves Deletage, Eric Woirgard Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01065237v1
Feasibility and performances of BOOST converter in automotive application using silicon power transistors operating at 200°C Author(s): Raphaël Roder, Stephane Azzopardi, Loïc Théolier, Eric Woirgard, Serge Bontemps Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01065131v1
First Assemblies Using Deep Trench Termination Diodes Author(s): Fédia Baccar, Loïc Théolier, Stephane Azzopardi, François Le Henaff, Jean-Yves Delétage, Eric Woirgard Year of publication: 2014 Journal: DOI: 10.1109/ISPSD.2014.6855996 HAL link: https://hal.science/hal-01017522v1
Failure initiation of IGBT due to emitter contact degradation: a 2D finite elements electro-thermal multi-cell simulation approach under hard switching, short-circuit and avalanche operations Author(s): Kamal El Boubkari, Stephane Azzopardi, Loïc Théolier, Raphaël Roder, Eric Woirgard, Serge Bontemps Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00955738v1
2D finite elements electro-thermal modeling for IGBT: uni and multicellular approach Author(s): Kamal El Boubkari, Stephane Azzopardi, Loïc Théolier, Jean-Yves Delétage, Eric Woirgard Year of publication: 2012 Journal: DOI: HAL link: https://hal.science/hal-00795341v1
Intérêt de la simulation 2D multicellulaire par éléments-finis pour l'analyse d'un défaut lié un décollement de fil de câblage sur une puce de puissance IGBT Author(s): Kamal El Boubkari, Stéphane Azzopardi, Loïc Théolier, Jean-Yves Delétage, Eric Woirgard Year of publication: 2012 Journal: DOI: HAL link: https://hal.science/hal-00955758v1
BJT static behavior improvement by modification of the epitaxial layer Author(s): Loïc Théolier, Luong Viet Phung, Nathalie Batut, Ambroise Schellmanns, Yves Raingeaud, Jean-Baptiste Quoirin Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00991551v1
BJT application expansion by insertion of superjunction Author(s): Loïc Théolier, Chawki Benboujema, Ambroise Schellmanns, Nathalie Batut, Yves Raingeaud, Jean-Baptiste Quoirin Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00991541v1
Improvement of a bidirectional switch for electric network Author(s): Chawki Benboujema, Ambroise Schellmanns, Loïc Théolier, Laurent Ventura Year of publication: 2009 Journal: DOI: HAL link: https://hal.science/hal-00991143v1
A new junction termination technique: The Deep Trench Termination (DT²) Author(s): Loïc Théolier, Hicham Mahfoz-Kotb, Karine Isoird, Frédéric Morancho Year of publication: 2009 Journal: DOI: 10.1109/ISPSD.2009.5158030 HAL link: https://hal.science/hal-00991573v1
Étude de faisabilité d'une terminaison de jonction basée sur des tranchées profondes pour des composants haute tension (1200 V) Author(s): Hicham Mahfoz-Kotb, Loïc Théolier, Frédéric Morancho, Karine Isoird, Pascal Dubreuil, Thierry Do Conto Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-01002269v1
Étude paramétrique des performances statiques du transistor DT-SJMOS 1200 V Author(s): Loïc Théolier, Hicham Mahfoz-Kotb, Karine Isoird, Frédéric Morancho Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-01002262v1
The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications Author(s): Loïc Théolier, Frédéric Morancho, Karine Isoird, Hicham Mahfoz-Kotb, Henri Tranduc Year of publication: 2007 Journal: DOI: HAL link: https://hal.science/hal-01002232v1
Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs Author(s): Loïc Théolier, Karine Isoird, Henri Tranduc, Frédéric Morancho, Jaume Roig Guitart, Yann Weber, E.N. Stefanov, Jean Michel Reynes Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-01005674v1
Performances dynamiques des transistors FLYMOSTM 65 Volts à canal N Author(s): Loïc Théolier, Karine Isoird, Henri Tranduc, Frédéric Morancho, Jaume Roig Guitart, Yann Weber, E.N. Stefanov, J.-M. Reynès Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-01002255v1
Conception de transistors MOS haute tension (1200 Volts) à tranchées profondes Author(s): Loïc Théolier, Karine Isoird, Frédéric Morancho, Jaume Roig Guitart Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-01005697v1

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