Sébastien FREGONESE

Associate Scientist

Research group : TERAHERTZ

Team : TERAHERTZ

Tel : 0540002800

Read more
Recruitment Member's area Intranet
Presentation
Publication
Contact

Sébastien Fregonese was born in Bordeaux, France. He received the M.Sc. and Ph.D. degrees in electronics from Université Bordeaux, Bordeaux, France, in 2002 and 2005, respectively.,During his Ph.D. research, he investigated SiGe heterojunction bipolar transistors (HBTs), with emphasis on compact modeling. From 2005 to 2006, he was a Postdoctoral Researcher with TU Delft, Delft, The Netherlands, where his research activities dealt with the Si strain field-effect transistor (FET) emerging devices, focusing on process and device simulation. In 2007, he joined CNRS, IMS, Bordeaux, France, as a Researcher. From 2011 to 2012, he was a Visiting Researcher with the University of Lille, Villeneuve-d’Ascq, France, focusing on the graphene FET device modeling. He is involved in a couple of National and European research projects such as the European FP7 IP Dot5, Dot7, FET GRADE,  H2020 TARANTO and SHIFT KDT. His current research interests include the electrical compact modeling and characterization of HF devices such as SiGe HBTs and FDSOI FET transistors.

Modifier cette page

Article (100)

Recent Progress in Bipolar and Heterojunction Bipolar Transistors on SOI Author(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Sebastien Fregonese Year of publication: 2025 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2025.109101 HAL link: https://hal.science/hal-05347420v1
Investigating Substrate Network Effects on Si/SiGe HBT Performance Up to 500 GHz Author(s): Philippine Billy, Nicolas Guitard, Thomas Zimmer, Alexis Gauthier, Pascal Chevalier, Sebastien Fregonese Year of publication: 2025 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/ted.2025.3593217 HAL link: https://hal.science/hal-05311255v1
Establishing On-Wafer Calibration Standards for the 16-Term Error Model: Application to Silicon High-Frequency Transistor Characterization Author(s): Sebastien Fregonese, Thomas Zimmer Year of publication: 2024 Journal: IEEE Journal of Microwaves DOI: HAL link: https://hal.science/hal-04697447v1
Exploring compact modeling of SiGe HBTs in sub-THz range with HICUM Author(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Nicolas Derrier, Sebastien Fregonese Year of publication: 2024 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3321017 HAL link: https://hal.science/hal-04410129v1
Exploring compact modeling of SiGe HBTs in Sub-THz range with HICUM Author(s): Soumya Ranjan Panda, Thomas Zimmer, Anjan Chakravorty, Nicolas Derrier, Sebastien Fregonese Year of publication: 2023 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3321017 HAL link: https://hal.science/hal-04274093v1
A TCAD-based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications Author(s): Soumya Ranjan Panda, Sebastien Fregonese, Pascal Chevalier, Anjan Chakravorty, Thomas Zimmer Year of publication: 2023 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2023.3251281 HAL link: https://hal.science/hal-04037634v1
Optimizing Finger Spacing in Multi-Finger Bipolar Transistors for Minimal Electrothermal Coupling Author(s): Aakashdeep Gupta, K. Nidhin, Suresh Balanethiram, Shon Yadav, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Year of publication: 2022 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2022.3215801 HAL link: https://hal.science/hal-03846331v1
A Technique for the in-situ Experimental Extraction of the Thermal Impedance of Power Devices Author(s): Ciro Scognamillo, Sebastien Fregonese, Thomas Zimmer, Vincenzo Daalessandro, Antonio Pio Catalano Year of publication: 2022 Journal: IEEE Transactions on Power Electronics DOI: 10.1109/TPEL.2022.3174617 HAL link: https://hal.science/hal-03776377v1
BEOL Thermal Resistance Extraction in SiGe HBTs Author(s): K. Nidhin, Suresh Balanethiram, Deleep Nair, Rosario d'Esposito, Nihar Mohapatra, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Year of publication: 2022 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2022.3215715 HAL link: https://hal.science/hal-03846371v1
Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f MAX Estimation From Measured Data Author(s): Bishwadeep Saha, Sébastien Fregonese, Bernd Heinemann, Patrick Scheer, Pascal Chevalier, Klaus Aufinger, Anjan Chakravorty, Thomas Zimmer Year of publication: 2021 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2020.3040891 HAL link: https://hal.science/hal-03111195v1
Importance of Probe Choice for Extracting Figures of Merit of Advanced mmW Transistors Author(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Didier Celi, Nicolas Derrier, Thomas Zimmer Year of publication: 2021 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2021.3118671 HAL link: https://hal.science/hal-03776416v1
Extraction of True Finger Temperature from Measured Data in Multi-Finger Bipolar Transistors Author(s): Aakashdeep Gupta, K. Nidhin, Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Year of publication: 2021 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2021.3054602 HAL link: https://hal.science/hal-03273341v1
SiGe HBTs and BiCMOS technology for present and future millimeter-wave system Author(s): Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquière, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Schneider, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, Thomas Zwick Year of publication: 2021 Journal: IEEE Journal of Microwaves DOI: 10.1109/jmw.2020.3031831 HAL link: https://hal.science/hal-03111157v1
Investigation of Variation in on-Si on-Wafer TRL Calibration in sub-THz Author(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Thomas Zimmer Year of publication: 2021 Journal: IEEE Transactions on Semiconductor Manufacturing DOI: 10.1109/TSM.2021.3073486 HAL link: https://hal.science/hal-03273325v1
Performance Prediction of InP/GaAsSb Double Heterojunction Bipolar Transistors for THz applications Author(s): Xin Wen, Akshay Arabhavi, Wei Quan, Olivier Ostinelli, Mukherjee Chhandak, Marina Deng, Sébastien Frégonèse, Thomas Zimmer, Cristell Maneux, Colombo R Bolognesi, Mathieu Luisier Year of publication: 2021 Journal: Journal of Applied Physics DOI: 10.1063/5.0054197 HAL link: https://hal.science/hal-03280514v1
Sub-THz and THz SiGe HBT Electrical Compact Modeling Author(s): Bishwadeep Saha, Sebastien Fregonese, Anjan Chakravorty, Soumya Ranjan Panda, Thomas Zimmer Year of publication: 2021 Journal: Electronics DOI: 10.3390/electronics10121397 HAL link: https://hal.science/hal-03273304v1
Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and sub-mmW Frequencies Measurements Author(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Arnaud Curutchet, Chandan Yadav, Didier Celi, Magali de Matos, Thomas Zimmer Year of publication: 2021 Journal: IEEE Transactions on Terahertz Science and Technology DOI: 10.1109/TTHZ.2021.3059337 HAL link: https://hal.science/hal-03273404v1
Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz Author(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Marco Cabbia, Magali de Matos, Bernard Plano, Thomas Zimmer Year of publication: 2020 Journal: IEEE Transactions on Terahertz Science and Technology DOI: 10.1109/TTHZ.2020.3004517 HAL link: https://hal.science/hal-02884144v1
Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz Author(s): Marina Deng, Chhandak Mukherjee, Chandan Yadav, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Wei Quan, Akshay Mahadev Arabhavi, Colombo Bolognesi, Xin Wen, Mathieu Luisier, Christian Raya, Bertrand Ardouin, Cristell Maneux Year of publication: 2020 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2020.3033834 HAL link: https://hal.science/hal-03088017v1
High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors Author(s): Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, Gilles Dambrine, Magali de Matos, Thomas Zimmer, Sébastien Frégonèse Year of publication: 2020 Journal: IEEE Transactions on Microwave Theory and Techniques DOI: 10.1109/TMTT.2020.2982396 HAL link: https://hal.science/hal-02540064v1
A broadband active microwave monolithically integrated circuit balun in graphene technology Author(s): Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy, Sebastien Fregonese Year of publication: 2020 Journal: Applied Sciences DOI: 10.3390/app10062183 HAL link: https://hal.science/hal-02884085v1
Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development Author(s): Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Year of publication: 2020 Journal: Electronics DOI: 10.3390/electronics9091333 HAL link: https://hal.science/hal-02920341v1
An Efficient Thermal Model for Multifinger SiGe HBTs Under Real Operating Condition Author(s): Nidhin K, Shubham Pande, Shon Yadav, Suresh Balanethiram, Deleep R Nair, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Year of publication: 2020 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2020.3021626 HAL link: https://hal.science/hal-03015948v1
Silicon Test Structures Design for Sub-THz and THz Measurements Author(s): Marco Cabbia, Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Year of publication: 2020 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2020.3031575 HAL link: https://hal.science/hal-03015973v1
THz characterization and modeling of SiGe HBTs: review (invited) Author(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Magali de Matos, Thomas Zimmer Year of publication: 2020 Journal: IEEE Journal of the Electron Devices Society DOI: 10.1109/JEDS.2020.3036135 HAL link: https://hal.science/hal-03014869v1
Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation Author(s): Sebastien Fregonese, Marco Cabbia, Chandan Yadav, Marina Deng, Soumya Ranjan Panda, Magali De Matos, Didier Celi, Anjan Chakravorty, Thomas Zimmer Year of publication: 2020 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2020.3022603 HAL link: https://hal.science/hal-03015012v1
Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation Author(s): Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Year of publication: 2020 Journal: Electronics DOI: 10.3390/electronics9091365 HAL link: https://hal.science/hal-02920343v1
TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz Author(s): Soumya Ranjan Panda, Sebastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer Year of publication: 2020 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2020.107915 HAL link: https://hal.science/hal-03016002v1
Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz Author(s): Sebastien Fregonese, Marina Deng, Magali de Matos, Chandan Yadav, Christian Raya, Bertrand Ardouin, Simon Joly, Bernard Plano, Thomas Zimmer Year of publication: 2019 Journal: IEEE Transactions on Terahertz Science and Technology DOI: HAL link: https://hal.science/hal-01985495v1
A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times Author(s): Xin Wen, Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Virginie Nodjiadjim, Muriel Riet, Wei Quan, Akshay Arabhavi, Olivier Ostinelli, Colombo Bolognesi, Cristell Maneux, Mathieu Luisier Year of publication: 2019 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2019.2946514 HAL link: https://hal.science/hal-02379133v1
Validation of Thermal Resistance Extracted From Measurements on Stripe Geometry SiGe HBTs Author(s): Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer Year of publication: 2019 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2019.2935012 HAL link: https://hal.science/hal-02277502v1
Scalable Modeling of Thermal Impedance in InP DHBTs Targeting Terahertz Applications Author(s): Chhandak Mukherjee, Marine Couret, Virginie Nodjiadjim, Muriel Riet, J.-Y. Dupuy, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Year of publication: 2019 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2019.2906979 HAL link: https://hal.science/hal-02372518v2
On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands Author(s): Sebastien Fregonese, Magali de Matos, Marina Deng, Manuel Potéreau, Cédric Ayela, Klaus Aufinger, Thomas Zimmer Year of publication: 2018 Journal: IEEE Transactions on Microwave Theory and Techniques DOI: 10.1109/TMTT.2018.2832067 HAL link: https://hal.science/hal-01818021v1
Class J Power Amplifier for 5G Applications in 28 nm CMOS FD-SOI Technology Author(s): Tony Hanna, Nathalie Deltimple, Sebastien Fregonese Year of publication: 2018 Journal: Journal of Integrated Circuits and Systems, DOI: HAL link: https://hal.science/hal-01904797v1
Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Author(s): Chhandak Mukherjee, Christian Raya, Bertrand Ardouin, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Mathieu Luisier, Wei Quan, Akshay Arabhavi, Colombo Bolognesi, Cristell Maneux Year of publication: 2018 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-01985507v1
Accurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average Thermal Conductivity Author(s): Suresh Balanethiram, Anjan Chakravorty, Rosario d'Esposito, Sebastien Fregonese, Didier Céli, Thomas Zimmer Year of publication: 2017 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2017.2724939 HAL link: https://hal.science/hal-01639642v1
Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs Author(s): Suresh Balanethiram, Rosario d'Esposito, Anjan Chakravorty, Sebastien Fregonese, Thomas Zimmer Year of publication: 2017 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2016.2645615 HAL link: https://hal.science/hal-01477147v1
Thermal Penetration Depth Analysis and Impact of the BEOL Metals on the Thermal Impedance of SiGe HBTs Author(s): Rosario d'Esposito, Suresh Balanethiram, Jean-Luc Battaglia, Sebastien Fregonese, Thomas Zimmer Year of publication: 2017 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2017.2743043 HAL link: https://hal.science/hal-01639596v1
Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications Author(s): Pascal Chevalier, Michael Schroter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Bock, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, C. Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolo Rinaldi, Holger Rucker, Gerald Wedel, Thomas Zimmer Year of publication: 2017 Journal: Proceedings of the IEEE DOI: 10.1109/JPROC.2017.2669087 HAL link: https://hal.science/hal-01639677v1
Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors Author(s): Himadri Pandey, Jorge-Daniel Aguirre-Morales, Satender Kataria, Sébastien Fregonese, Vikram Passi, Mario Iannazzo, Thomas Zimmer, Eduard Alarcon, Max C. Lemme Year of publication: 2017 Journal: Annalen der Physik DOI: 10.1002/andp.201700106 HAL link: https://hal.science/hal-01639708v1
A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications Author(s): Jorge-Daniel Aguirre-Morales, Sébastien Fregonese, Chhandak Mukherjee, Wei Wei, Henri Happy, Cristell Maneux, Thomas Zimmer Year of publication: 2017 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2017.2736444 HAL link: https://hal.science/hal-01639648v1
Innovative SiGe HBT Topologies With Improved Electrothermal Behavior Author(s): Rosario d'Esposito, Sebastien Fregonese, Anjan Chakravorty, Pascal Chevalier, Didier Celi, Thomas Zimmer Year of publication: 2016 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2016.2570601 HAL link: https://hal.science/hal-01399080v1
2.5GHz integrated graphene RF power amplifier on SiC substrate Author(s): T. Hanna, N. Deltimple, S. Khenissa, E. Pallecchi, H. Happy, S. Frégonèse Year of publication: 2016 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2016.10.002 HAL link: https://hal.science/hal-01399069v1
Analytic Estimation of Thermal Resistance in HBTs Author(s): Anjan Chakravorty, Rosario d'Esposito, Suresh Balanethiram, Sebastien Fregonese, Thomas Zimmer Year of publication: 2016 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2016.2572959 HAL link: https://hal.science/hal-01399079v1
Efficient Modeling of Distributed Dynamic Self-Heating and Thermal Coupling in Multifinger SiGe HBTs Author(s): Suresh Balanethiram, Rosario d'Esposito, Anjan Chakravorty, Sebastien Fregonese, Didier Celi, Thomas Zimmer Year of publication: 2016 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2016.2586539 HAL link: https://hal.science/hal-01399074v1
A Study on Self-Heating and Mutual Thermal Coupling in SiGe Multi-Finger HBTs Author(s): A. D. D. Dwivedi, Rosario D’esposito, Amit Kumar Sahoo, Sebastien Fregonese, Thomas Zimmer Year of publication: 2016 Journal: Journal of Electronic Materials DOI: 10.1007/s11664-016-4728-6 HAL link: https://hal.science/hal-01399065v1
Comments on “Optimization of a Compact I–V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration” Author(s): Sebastien Fregonese, Thomas Zimmer Year of publication: 2016 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2016.2540920 HAL link: https://hal.science/hal-01399083v1
On the development of a novel high VSWR programmable impedance tuner Author(s): Arnaud Curutchet, Anthony Ghiotto, Manuel Potéreau, Magali de Matos, Sebastien Fregonese, Eric Kerhervé, Thomas Zimmer Year of publication: 2016 Journal: International Journal of Microwave and Wireless Technologies DOI: 10.1017/S1759078716000659 HAL link: https://hal.science/hal-01345690v1
Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology Author(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Year of publication: 2015 Journal: Electronics Letters DOI: 10.1049/el.2014.3634 HAL link: https://hal.science/hal-01100656v1
An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs Author(s): Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2015.2487243 HAL link: https://hal.science/hal-01235964v1
Nonlinear modelling of dynamic self-heating in 28 nm bulk complementary metal–oxide semiconductor technology Author(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Year of publication: 2015 Journal: Electronics Letters DOI: 10.1049/el.2015.0200 HAL link: https://hal.science/hal-01162361v1
Isothermal Electrical Characteristic Extraction for mmWave HBTs Author(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario d'Esposito, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2014.2372899 HAL link: https://hal.science/hal-01090791v1
Source-Pull and Load-Pull Characterization of Graphene FET Author(s): Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, Thomas Zimmer Year of publication: 2015 Journal: IEEE Journal of the Electron Devices Society DOI: 10.1109/JEDS.2014.2360408 HAL link: https://hal.science/hal-01090826v1
A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs Author(s): Amit Kumar Sahoo, Sebastien Fregonese, Rosario Desposito, Klaus Aufinger, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2014.2375331 HAL link: https://hal.science/hal-01090801v1
Graphene Transistor-Based Active Balun Architectures Author(s): Thomas Zimmer, Sebastien Fregonese Year of publication: 2015 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2015.2457496 HAL link: https://hal.science/hal-01235955v1
Obtaining DC and AC isothermal electrical characteristics for RF MOSFET Author(s): A.K. Sahoo, S. Fregonese, P. Scheer, D. Celi, A. Juge, T. Zimmer Year of publication: 2015 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2015.01.021 HAL link: https://hal.science/hal-01127985v1
Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition Author(s): A.D.D. Dwivedi, Anjan Chakravorty, Rosario D’esposito, Amit Kumar Sahoo, Sebastien Fregonese, Thomas Zimmer Year of publication: 2015 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2015.09.016 HAL link: https://hal.science/hal-01235941v1
Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design Author(s): Chhandak Mukherjee, Jorge-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Year of publication: 2015 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2015.2395134 HAL link: https://hal.science/hal-01127979v1
Electrical Compact Modeling of Graphene Base Transistors Author(s): Sébastien Frégonèse, Stefano Venica, Francesco Driussi, Thomas Zimmer Year of publication: 2015 Journal: Advances in OptoElectronics DOI: 10.3390/electronics4040969 HAL link: https://hal.science/hal-01235945v1
A Comprehensive Graphene FET Model for Circuit Design Author(s): Saul Rodriguez, Sam Vaziri, Anderson Smith, Sébastien Frégonèse, Mikael Ostling, Max Lemme, Ana Rusu Year of publication: 2014 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00978699v1
Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling Author(s): Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Year of publication: 2014 Journal: IEEE Transactions on Nanotechnology DOI: 10.1109/TNANO.2014.2328351 HAL link: https://hal.science/hal-01090852v1
Limitations of on-wafer calibration and de-embedding methods in the sub-THz range Author(s): M. Potereau, C. Raya, M. de Matos, S. Fregonese, A. Curutchet, M. Zhang, B. Ardouin, T. Zimmer Year of publication: 2013 Journal: Journal of Computer and Communications DOI: 10.4236/jcc.2013.16005 HAL link: https://hal.science/hal-01002098v1
80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices Author(s): Mario Weib, Sébastien Fregonese, Marco Santorelli, Kumar Sahoo Amit, Cristell Maneux, Thomas Zimmer Year of publication: 2013 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2013.02.027 HAL link: https://hal.science/hal-00909009v1
Benchmarking of GFET devices for amplifier application using multiscale simulation approach Author(s): Sébastien Fregonese, Manuel Potereau, Nathalie Deltimple, Cristell Maneux, Thomas Zimmer Year of publication: 2013 Journal: Journal of Computational Electronics DOI: 10.1007/s10825-013-0525-0 HAL link: https://hal.science/hal-00918225v1
Multiscale simulation of carbon nanotube transistors Author(s): Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Sylvie Retailleau, Huu Nha Nguyen, Damien Querlioz, Arnaud Bournel, Philippe Dollfus, François Triozon, Yann-Michel Niquet, Stephan Roche Year of publication: 2013 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2013.06.013 HAL link: https://hal.science/hal-00906950v1
Scalable Electrical Compact Modeling for Graphene FET Transistors Author(s): Sébastien Fregonese, Maura Magallo, Cristell Maneux, H. Happy, Thomas Zimmer Year of publication: 2013 Journal: IEEE Transactions on Nanotechnology DOI: 10.1109/TNANO.2013.2257832 HAL link: https://hal.science/hal-00906225v1
A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs Author(s): Amit Kumar Sahoo, Sebastien Fregonese, Mario Weis, Nathalie Malbert, Thomas Zimmer Year of publication: 2012 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2012.2209651 HAL link: https://hal.science/hal-00978803v1
Characterization of self-heating in Si-Ge HBTs with pulse, DC and AC measurements Author(s): Amit Kumar Sahoo, Sébastien Fregonese, Mario Weiss, Brice Grandchamp, Nathalie Malbert, Thomas Zimmer Year of publication: 2012 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2012.04.039 HAL link: https://hal.science/hal-00978797v1
Characterization and Modeling of Graphene Transistor Low-Frequency Noise Author(s): Brice Grandchamp, Sebastien Fregonese, Cédric Majek, Cyril Hainaut, Cristell Maneux, Nan Meng, Henri Happy, Thomas Zimmer Year of publication: 2012 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2011.2175930 HAL link: https://hal.science/hal-00669458v1
Electrical compact modelling of graphene transistors Author(s): S. Fregonese, N. Meng, H.N. Nguyen, C. Majek, C. Maneux, H. Happy, T. Zimmer Year of publication: 2012 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2012.02.002 HAL link: https://hal.science/hal-00786908v1
Transient electro-thermal characterization of Si-Ge heterojunction bipolar transistors Author(s): Amit Kumar Sahoo, Mario Weiss, Sébastien Fregonese, Nathalie Malbert, Thomas Zimmer Year of publication: 2012 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2012.04.015 HAL link: https://hal.science/hal-00978809v1
Electrical compact modelling of graphene transistors Author(s): Sebastien Fregonese, N. Meng, H.-N. Nguyen, C. Majek, C. Maneux, H. Happy, T. Zimmer Year of publication: 2012 Journal: Solid-State Electronics DOI: HAL link: https://hal.science/hal-01002093v1
FPGA Design with Double-Gate Carbon Nanotube Transistors Author(s): M. H. Ben Jamaa,  p.-E. Gaillardon, S. Frégonèse, M. de Marchi, G. de Micheli, T. Zimmer, I. O'Connor, F. Clermidy Year of publication: 2011 Journal: The Electro-Chemical Society Transactions DOI: HAL link: https://hal.science/hal-01002089v1
Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, N. Masmoudi, Thomas Zimmer Year of publication: 2011 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2010.2084351 HAL link: https://hal.science/hal-00584876v1
Thermal impedance modeling of SiGe HBTs from low-frequency small-signal measurements Author(s): A.K. Sahoo, Sebastien Fregonese, Thomas Zimmer, Nathalie Malbert Year of publication: 2011 Journal: IEEE Electron Device Letters DOI: 10.1109/LED.2010.2091252 HAL link: https://hal.science/hal-00584885v1
A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2011 Journal: IEEE Transactions on Electron Devices DOI: 10.1109/TED.2010.2082548 HAL link: https://hal.science/hal-00584879v1
Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices Author(s): Si-Yu Liao, J.M. Retrouvey, G. Agnus, W. Zhao, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, D. Chabi, A. Filoramo, Vincent Derycke, C. Gamrat, J.O. Klein Year of publication: 2011 Journal: IEEE Transactions on Circuits and Systems DOI: HAL link: https://hal.science/hal-00584909v1
A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2010.06.004 HAL link: https://hal.science/hal-00512742v1
Compact modeling of optically gated carbon nanotube field effect transistor Author(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Year of publication: 2010 Journal: physica status solidi (b) DOI: 10.1002/pssb.200983818 HAL link: https://hal.science/hal-00495144v1
TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layer Author(s): Al-Sadi Mahmoud, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: Materials Science in Semiconductor Processing DOI: 10.1016/j.mssp.2011.03.002 HAL link: https://hal.science/hal-00671678v1
SiGe HBTs optimization for wireless power amplifier applications Author(s): Thomas Zimmer, Pierre-Marie Mans, Sebastien Jouan, Sebastien Fregonese, Benoit Vandelle, Denis Pache, Arnaud Curutchet, Cristell Maneux Year of publication: 2010 Journal: Active and Passive Electronic Components DOI: 10.1155/2010/542572 HAL link: https://hal.science/hal-00671680v1
Efficient physics-based compact model for the Schottky barrier carbon nanotube FET Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, H. Mnif, Thomas Zimmer, N. Masmoudi Year of publication: 2010 Journal: Physica Status Solidi C: Current Topics in Solid State Physics DOI: 10.1002/pssc.200983825 HAL link: https://hal.science/hal-00584855v1
Implementation of Electron–Phonon Scattering in a CNTFET Compact Model Author(s): Sebastien Fregonese, Johnny Goguet, Cristell Maneux, Thomas Zimmer Year of publication: 2009 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00388046v1
Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuits Author(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Year of publication: 2009 Journal: Solid-State Electronics DOI: HAL link: https://hal.science/hal-00399786v1
Implementation of tunneling phenomena in a CNTFET compact model Author(s): Sebastien Fregonese, Cristell Maneux, T. Zimmer Year of publication: 2009 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00399797v1
Multiscale simulation of carbon nanotube devices Author(s): Christophe Adessi, R. Avriller, A. Bournel, Xavier Blase, H. Cazin d'Honincthun, P. Dollfus, S. Frégonèse, S. Galdin-Retailleau, A. López-Bezanilla, C. Maneux, H. Nha Nguyen, D. Querlioz, S. Roche, F. Triozon, T. Zimmer Year of publication: 2009 Journal: Comptes Rendus. Physique DOI: 10.1016/j.crhy.2009.05.004 HAL link: https://hal.science/hal-00400169v1
Behavior and optimizations of Si/SiGe HBT on thin-film SOI Author(s): Gregory Avenier, Sebastien Fregonese, Benoit Vandelle, D. Dutartre, Fabienne Saguin, Thierry Schwartzmann, Cristell Maneux, Thomas Zimmer, Alain Chantre Year of publication: 2008 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00197532v1
Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design Author(s): Sebastien Fregonese, Hughes Cazin d'Honincthun, Johnny Goguet, Cristell Maneux, Thomas Zimmer, J.-P. Bourgoin, P. Dollfus, S. Galdin-Retailleau Year of publication: 2008 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00287142v1
Challenges and potential of new approaches for reliability assessment of nanotechnologies Author(s): L. Bechou, Y. Danto, J.Y. Deletage, F. Verdier, Y. Deshayes, S. Fregonese, C. Maneux, T. Zimmer, D. Laffitte Year of publication: 2008 Journal: Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie DOI: HAL link: https://hal.science/hal-00266387v1
Modeling of Strained CMOS on Disposable SiGe Dots : shape impacts on electrical/thermal characteristics Author(s): Sebastien Fregonese, Y. Zhuang, J. N. Burghartz Year of publication: 2008 Journal: Solid-State Electronics DOI: 10.1016/j.sse.2008.01.022 HAL link: https://hal.science/hal-00261552v1
CNTFET modeling and reconfigurable logic circuit design Author(s): Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Cristell Maneux, C. Lallement, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Lorena Anghel, Régis Leveugle, T. Dang Year of publication: 2007 Journal: IEEE Transactions on Circuits and Systems DOI: 10.1109/TCSI.2007.907835 HAL link: https://hal.science/hal-00187137v1
Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices' Electrical Characteristics Author(s): Sebastien Fregonese, Yan Zhuang, Joachim N. Burghartz Year of publication: 2007 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00169352v1
A compact model for SiGe HBT on thin film SOI Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2006 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00181969v1
A computationally efficient physics-based compact bipolar transistor model for circuit design - Part I: model formulation Author(s): M. Schroter, S. Lehmann, Sébastien Fregonese, Thomas Zimmer Year of publication: 2006 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00181971v1
A computationally efficient physics-based compact bipolar transistor model for circuit design - Part II:Experimental results Author(s): Sébastien Fregonese, S. Lehmann, Thomas Zimmer, M. Schroter, D. Celi, Bertrand Ardouin, Helene Beckrich, P. Brenner, W. Kraus Year of publication: 2006 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00181970v1
Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2006 Journal: Solid-State Electronics DOI: HAL link: https://hal.science/hal-00181972v1
A Scalable Substrate Network for HBT Compact Modeling Author(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Year of publication: 2005 Journal: Solid-State Electronics DOI: HAL link: https://hal.science/hal-00181973v1
Obtaining Isothermal Data for HBT Author(s): Sébastien Fregonese, Thomas Zimmer, Hassene Mnif, P. Baureis, Cristell Maneux Year of publication: 2004 Journal: IEEE Transactions on Electron Devices DOI: HAL link: https://hal.science/hal-00181975v1
Representation of the SiGe HBT's Thermal Impedance by Linear and Recursive Networks Author(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Year of publication: 2004 Journal: Microelectronics Reliability DOI: HAL link: https://hal.science/hal-00181976v1
Analysis and modeling of the self-heating effect in SiGe HBTs Author(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Year of publication: 2004 Journal: European Physical Journal: Applied Physics DOI: HAL link: https://hal.science/hal-00181974v1

Poster communication (1)

Characterization of Sub-THz and THz Transistors Author(s): Abhishek Kumar Upadhyay, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02396565v1

Book (1)

Foreword Author(s): Thomas Zimmer, Sebastien Fregonese Year of publication: 2013 Journal: DOI: 10.1016/j.sse.2013.02.033 HAL link: https://hal.science/hal-00978707v1

Book sections (2)

Chapter 2 - Electrothermal Characterization, TCAD Simulations, and Physical Modeling of Advanced SiGe HBTs Author(s): Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-01923381v1
Network Analysis for SiGe HBT's Thermal Impedance Modelling Author(s): Hassene Mnif, Jean-Luc Battaglia, Pierre Yvan Sulima, Sebastien Fregonese, Thomas Zimmer Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181751v1

Patents (3)

Transistor bipolaire latéral Author(s): pascal chevalier, Sebastien Fregonese, Thomas Zimmer Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04410535v1
Balun device with GFET transistors Author(s): Thomas Zimmer, Sebastien Fregonese, Henri Happy Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-01721670v1
Dispositif de calibrage pour l'ajustement d'une mesure radiofréquence Author(s): Thomas Zimmer, Fregonese Sebastien, A. Curutchet, Manuel Potéreau, Christian Raya Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01721675v1

Other publication (3)

On-Wafer TRL Calibration Kit Design for InP Technologies Characterization Up To 500 GHz Author(s): Marina Deng, Mukherjee Chhandak, Chandan Yadav, Colombo Bolognesi, Virginie Nodjiadjim, Sebastien Fregonese, Thomas Zimmer, Magali de Matos, Cristell Maneux Year of publication: 2021 Journal: ESSDERC 2021 DOI: HAL link: https://hal.science/hal-03407881v1
Multi-Scale Modeling of Type-II DHBTs: from Bandstructure to Self-Heating Effects Author(s): Xin Wen, Akshay Mahadev Arabhavi, Wei Quan, Olivier Ostinelli, Mukherjee Chhandak, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Colombo Bolognesi, Mathieu Luisier Year of publication: 2021 Journal: Workshop ESSDERC 2021 DOI: HAL link: https://hal.science/hal-03407871v1
Frequency analysis of the penetration depth of the heat flow in SiGe HBTs Author(s): d'Esposito Rosario, Sébastien Fregonese, Balanethiram Suresh, Thomas Zimmer Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-01649953v1

HDR (1)

Caractérisation et modélisation des transistors avancés et émergents pour la conception de circuit Author(s): Sebastien Fregonese Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/tel-02379493v1

Conference proceedings (123)

Error Term Analysis in 16-Term Calibration: Enhancing SiGe HBT S-Parameter Accuracy up to 330 GHz Author(s): Tarek Bouzar, Jojo Varghese, Jean-Daniel Arnould, Thomas Zimmer, Sebastien Fregonese Year of publication: 2025 Journal: DOI: 10.23919/EuMIC65284.2025.11234505 HAL link: https://hal.science/hal-05399970v1
Integration of Lateral Si/SiGe HBTs on Advanced FD-SOI Technology: Process Development and Challenges Author(s): Philippine Billy, Soumya Ranjan Panda, Nicolas Guitard, Olivier Weber, Alexis Gauthier, Pascal Chevalier, Thomas Zimmer, Sebastien Fregonese Year of publication: 2025 Journal: DOI: 10.1109/SiRF63957.2025.11076930 HAL link: https://hal.science/hal-05347033v1
Robust Measurement and De-embedding Techniques of Si/SiGe HBT Devices up to 500 GHz Author(s): Philippine Billy, Jojo Varghese, Magali de Matos, Didier Celi, Nicolas Derrier, Alexis Gauthier, Pascal Chevalier, Thomas Zimmer, Sebastien Fregonese Year of publication: 2025 Journal: DOI: 10.1109/SiRF63957.2025.11077051 HAL link: https://hal.science/hal-05395011v1
Integration of Lateral Si/SiGe HBTs on Advanced FD-SOI Technology: Process Development and Challenges Author(s): Philippine Billy, Soumya Ranjan Panda, Nicolas Guitard, Olivier Weber, Alexis Gauthier, Pascal Chevalier, Thomas Zimmer, Sebastien Fregonese Year of publication: 2025 Journal: DOI: 10.1109/SiRF63957.2025.11076930 HAL link: https://hal.science/hal-05407122v1
Comparaison des Modèles de Calibrage pour l'Extraction Précise des Performances RF d'un Transistor HBT SiGe en haute fréquence Author(s): Tarek Bouzar, Philippine Billy, Jojo Varghese, Jean-Daniel Arnould, Magali de Matos, Thomas Zimmer, Sebastien Fregonese Year of publication: 2024 Journal: DOI: HAL link: https://hal.science/hal-04818103v1
Sonde haute fréquence avec couplage réduit pour la mesure on-wafer Author(s): Tarek Bouzar, Jean-Daniel Arnould, Thomas Zimmer, Sebastien Fregonese Year of publication: 2024 Journal: DOI: HAL link: https://hal.science/hal-04697436v1
Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification (Invited) Author(s): Soumya Ranjan Panda, Philippine Billy, Alexis Gauthier, Nicolas Guitard, Pascal Chevalier, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Year of publication: 2024 Journal: DOI: 10.1109/EDTM58488.2024.10511770 HAL link: https://hal.science/hal-04603010v1
Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz Author(s): Karthi Pradeep, Sebastien Fregonese, Marina Deng, Benjamin Dormieu, Patrick Scheer, Thomas Zimmer Year of publication: 2023 Journal: DOI: 10.1109/ARFTG56062.2023.10148879 HAL link: https://hal.science/hal-04274103v1
SiGe-based Nanowire HBT for THz Applications Author(s): Soumya Ranjan Panda, Sebastien Fregonese, Anjan Chakravorty, Thomas Zimmer Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04037313v1
What causes the fluctuations in fmax with respect to frequency? Author(s): Thomas Zimmer, Tarek Bouzar, Jean-Daniel Arnould, Sebastien Fregonese Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04409931v1
S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range Author(s): Chandan Yadav, Sebastien Fregonese, Marco Cabbia, Marina Deng, Magali de Matos, Thomas Zimmer Year of publication: 2022 Journal: DOI: 10.1109/ICMTS50340.2022.9898233 HAL link: https://hal.science/hal-03856275v1
TRL-calibration Standards with Emphasis on Crosstalk Reduction Author(s): Marco Cabbia, Sebastien Fregonese, Chandan Yadav, Thomas Zimmer Year of publication: 2022 Journal: DOI: 10.1109/GSMM53818.2022.9792326 HAL link: https://hal.science/hal-03776360v1
Guideline for test-structures placement for on-Wafer calibration in sub-THz Si device characterization Author(s): Chandan Yadav, Marco Cabbia, Sebastien Fregonese, Marina Deng, Magali de Matos, Thomas Zimmer Year of publication: 2021 Journal: DOI: 10.1109/IMS19712.2021.9574928 HAL link: https://hal.science/hal-03851109v1
Meander-Type Transmission Line Design for On-Wafer TRL Calibration up to 330 GHz Author(s): Marco Cabbia, Marina Deng, Sebastien Fregonese, Chandan Yadav, Arnaud Curutchet, Magali de Matos, Didier Celi, Thomas Zimmer Year of publication: 2021 Journal: DOI: 10.23919/EuMC48046.2021.9338177 HAL link: https://hal.science/hal-03173013v1
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance Author(s): Sebastien Fregonese, Chhandak Mukherjee, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Celi, Marina Deng, Marine Couret, Francois Marc, Cristell Maneux, Thomas Zimmer Year of publication: 2021 Journal: DOI: 10.1109/BCICTS50416.2021.9682476 HAL link: https://hal.science/hal-03776392v1
In-Situ Calibration and De-Embedding Test Structure Design for SiGe HBT On-Wafer Characterization up to 500 GHz Author(s): M. Cabbia, Marina Deng, S. Fregonese, M. De Matos, D. Celi, T. Zimmer Year of publication: 2020 Journal: DOI: 10.1109/ARFTG47584.2020.9071733 HAL link: https://hal.science/hal-02569052v1
Characterization of Sub-THz & THz Transistors Author(s): Marco Cabbia, Sebastien Fregonese, Marina Deng, Magalie de Matos, Zimmer Thomas, Abhishek Kumar Upadhyay Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02512268v1
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range Author(s): Soumya Ranjan Panda, Sébastien Frégonèse, Anjan Chakravorty, Thomas Zimmer Year of publication: 2019 Journal: DOI: 10.1109/BCICTS45179.2019.8972760 HAL link: https://hal.science/hal-02532692v1
Collector-substrate modeling of SiGe HBTs up to THz range Author(s): Bishwadeep Saha, Sébastien Frégonèse, Soumya Ranjan Panda, Anjan Chakravorty, Didier Celi, Thomas Zimmer Year of publication: 2019 Journal: DOI: 10.1109/BCICTS45179.2019.8972745 HAL link: https://hal.science/hal-02532693v1
RF Characterization of 28 nm FD-SOI Transistors Up to 220 GHz Author(s): Marina Deng, Sébastien Frégonèse, Benjamin Dorrnieu, Patrick Scheer, Magali de Matos, Thomas Zimmer Year of publication: 2019 Journal: DOI: 10.1109/EUROSOI-ULIS45800.2019.9041884 HAL link: https://hal.science/hal-02517274v1
Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges Author(s): Marine Couret, Gerhard Fischer, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02276656v1
Assessment of device RF performance and behavior using TCAD simulation Author(s): Soumya Ranjan Panda, Sébastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02404058v1
Exploration of Maximum Oscillation frequency (fmax) Author(s): Bishwadeep Saha, Sebastien Fregonese, Chakravorty Anjan, Thomas Zimmer Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02372737v1
On the Variation in Short-Open De-embedded S-parameter Measurement of SiGe HBT upto 500 GHz Author(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Thomas Zimmer Year of publication: 2019 Journal: DOI: 10.23919/GEMIC.2019.8698153 HAL link: https://hal.science/hal-02305963v1
Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz Author(s): Chandan Yadav, Sebastien Fregonese, Marina Deng, Marco Cabbia, Magali de Matos, Mathieu Jaoul, Thomas Zimmer Year of publication: 2019 Journal: DOI: 10.1109/ICMTS.2019.8730962 HAL link: https://hal.science/hal-02163807v1
TCAD versus High Frequency Mesurements of SiGe HBTs Author(s): Soumya Ranjan Panda, Sebastien Fregonese, Chakravorty Anjan, Thomas Zimmer Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02372723v1
2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance Author(s): Dalal Fadil, Wei Wei, Marina Deng, Sebastien Fregonese, Wlodek Stuprinski, Emiliano Pallecchi, Henri Happy Year of publication: 2018 Journal: DOI: 10.1109/MWSYM.2018.8439655 HAL link: https://hal.science/hal-02372682v1
Impact of on-Silicon De-Embedding Test Structures and RF Probes Design in the Sub-THz Range Author(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Bernard Plano, Thomas Zimmer Year of publication: 2018 Journal: DOI: HAL link: https://hal.science/hal-01985501v1
Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range Author(s): Chandan Yadav, Marina Deng, Magali de Matos, Sébastien Fregonese, Thomas Zimmer Year of publication: 2018 Journal: DOI: 10.1109/ICMTS.2018.8383798 HAL link: https://hal.science/hal-01838050v1
Extracting the temperature dependence of thermal resistance from temperature-controlled DC measurements of sige HBTs Author(s): Suresh Balanethiram, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Jorg Berkner, Didier Céli Year of publication: 2017 Journal: DOI: 10.1109/BCTM.2017.8112919 HAL link: https://hal.science/hal-01695326v1
NF 50 Ohm: Improvement of the high frequency noise measurement bench 0.8 – 18 GHz of the NANOCOM platform Author(s): Ghyslain Medzegue, Magali de Matos, Sebastien Fregonese, Zimmer Thomas, Marina Deng Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-02512283v1
Extracting the FEOL and BEOL components of thermal resistance in SiGe HBTs Author(s): Balanethiram Suresh, Chakravorty Anjan, d'Esposito Rosario, Fregonese Sebastien, Zimmer Thomas Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-01639744v1
Design of Silicon On-Wafer Sub-THz Calibration Kit Author(s): Marina Deng, Sebastien Fregonese, Didier Céli, Pascal Chevalier, Magali de Matos, Thomas Zimmer Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-01985481v1
Class-J Power Amplifier for 5G Applications in 28nm CMOS FD-SOI Technology Author(s): Tony Hanna, Nathalie Deltimple, Sebastien Fregonese Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-01618189v1
Characterization and modelling of SubTHz & THz-transistors Author(s): Marina Deng, Sebastien Fregonese, Magali de Matos, Zimmer Thomas Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-02512287v1
Influence of the BEOL metallization design on the overall performances of SiGe HBTs Author(s): d'Esposito Rosario, Matos Magali De, Fregonese Sebastien, Balanethiram Suresh, Chakravorty Anjan, Aufinger Klaus, Zimmer Thomas Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-01639666v1
High frequency and noise performance of GFETs Author(s): W. Wei, D. Fadil, Emiliano Pallecchi, Gilles Dambrine, Henri Happy, Marina Deng, S. Fregonese, T. Zimmer Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-01639676v1
A Wideband Highly Efficient Class-J Integrated Power Amplifier for 5G Applications Author(s): Tony Hanna, Nathalie Deltimple, Sebastien Fregonese Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-01618182v1
Meander type transmission line design for on-wafer TRL calibration Author(s): Manuel Potéreau, Marina Deng, C Raya, Bertrand Ardouin, Klaus Aufinger, Cédric Ayela, Magalie Dematos, Arnaud Curutchet, Sebastien Fregonese, Thomas Zimmer Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-01301312v1
A Test Structure Set for on-wafer 3D-TRL calibration Author(s): Manuel Potéreau, Arnaud Curutchet, Rosario d'Esposito, Magali de Matos, Sebastien Fregonese, Thomas Zimmer Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-01399900v1
Physics-based electrical compact model for monolayer Graphene FETs Author(s): Jorge Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy Year of publication: 2016 Journal: DOI: 10.1109/ESSDERC.2016.7599630 HAL link: https://hal.science/hal-01399868v1
TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS Author(s): T. Vu, D. Celi, T. Zimmer, S. Fregonese, P. Chevalier Year of publication: 2016 Journal: DOI: 10.1149/07508.0113ecst HAL link: https://hal.science/hal-01399104v1
An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs Author(s): Suresh Balanethiram, Anjan Chakravorty, Rosario D ' Esposito, Sebastien Fregonese, Thomas Zimmer Year of publication: 2016 Journal: DOI: 10.1109/BCTM.2016.7738953 HAL link: https://hal.science/hal-01399878v1
Dedicated test-structures for investigation of the thermal impact of the BEOL in advanced SiGe HBTs in time and frequency domain Author(s): Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-01399905v1
Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS Author(s): Tuan Van Vu, Didier Celi, Thomas Zimmer, Sebastien Fregonese, Pascal Chevalier Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-01399885v1
Nouvelles structures 3D pour calibrage TRL sur puces adaptées à la mesure de paramètres S très hautes fréquences Author(s): Manuel Potereau, Sebastien Fregonese, Arnaud Curutchet, Peter Baureis, Thomas Zimmer Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01163604v1
Caractérisation et modélisation d’une nouvelle technologie de synthétiseur d’impédances automatiques coaxial 3,5mm à fort TOS Author(s): Manuel Potéreau, Arnaud Curutchet, Anthony Ghiotto, Magali de Matos, Sébastien Fregonese, Eric Kerhervé, Thomas Zimmer Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01158220v1
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs Author(s): Chhandak Mukherjee, Jorgue-Daniel Aguirre-Morales, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01235951v1
Towards amplifier design with a SiC graphene field-effect transistor Author(s): Jorgue Daniel Aguirre-Morales, Sébastien Frégonèse, Arun Dev Dhar Dwivedi, Thomas Zimmer, Mohamed Salah Khenissa, Mohamed Moez Belhaj, Henri Happy Year of publication: 2015 Journal: DOI: 10.1109/ULIS.2015.7063781 HAL link: https://hal.science/hal-01158691v1
Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance Author(s): Tuan Van Vu, Tommy Rosenbaum, O. Saxod, Didier Céli, Thomas Zimmer, Sebastien Fregonese, Pascal Chevalier Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01399915v1
Early Demonstration of a High VSWR Microwave Coaxial Programmable Impedance Tuner with Coaxial Slugs Author(s): Arnaud Curutchet, Anthony Ghiotto, Manuel Potereau, Magali de Matos, Sebastien Fregonese, Eric Kerherve, Zimmer Thomas Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01163596v1
A new physics-based compact model for Bilayer Graphene Field-Effect Transistors Author(s): Jorgue Daniel Aguirre-Morales, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: DOI: 10.1109/ESSDERC.2015.7324743 HAL link: https://hal.science/hal-01235950v1
Monocristaux de semiconducteurs organiques : le premier transistor bipolaire organique et d’autres applications en MEMS organiques Author(s): Marco Pereira, Cédric Ayela, Sebastien Fregonese, Stéphane Bachevillier, Lionel Hirsch, Alfred Crosby, Alejandro Briseno, Guillaume Wantz Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01228631v1
New 3D-TRL structures for on-wafer calibration for high frequency S-parameter measurement Author(s): Manuel Potereau, Sebastien Fregonese, Arnaud Curutchet, Peter Baureis, Thomas Zimmer Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01163593v1
Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs Author(s): Suresh Balanethiram, Anjan Chakravorty, Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01399911v1
Statistical Study on the Variation of Device Performance in CVD-grown Graphene FETs Author(s): C. Mukherjee, D.A. Morales, Sebastien Fregonese, C. Maneux, T. Zimmer Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01002511v1
Analytical Study of Performances of Bilayer and Monolayer Graphene FETs based on Physical Mechanisms Author(s): J.D. Aguirre-Morales, C. Mukherjee, Sebastien Fregonese, C. Maneux, T. Zimmer Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01002504v1
Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation Author(s): Mukherjee Chhandak, Sebastien Fregonese, Thomas Zimmer, H. Happy, David Mele, Cristell Maneux Year of publication: 2014 Journal: DOI: 10.1109/ESSDERC.2014.6948821 HAL link: https://hal.science/hal-01090864v1
A study on transient intra-device thermal coupling in multifinger SiGe HBTs Author(s): Rosario d'Esposito, Mario Weiss, Amit Kumar Sahoo, Sébastien Frégonèse, Zimmer T. Year of publication: 2014 Journal: DOI: 10.1109/BCTM.2014.6981309 HAL link: https://hal.science/hal-01158666v1
A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTs Author(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Cristell Maneux, Thomas Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905673v1
Limitations of on-wafer calibration and de-embedding methods in the sub-THz range Author(s): M. Potereau, C. Raya, Magali de Matos, Sébastien Fregonese, Arnaud Curutchet, M. Zhang, B. Ardouin, Thomas Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00909399v1
Mutual thermal coupling in SiGe:C HBTs Author(s): M. Weiss, A.K. Sahoo, C. Maneux, S. Fregonese, T. Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00978734v1
Modeling of mutual thermal coupling in SiGe:C HBTs Author(s): Mario Weib, Kumar Sahoo Amit, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905817v1
The potential of graphene for electronics Author(s): Thomas Zimmer, Sébastien Fregonese, Cristell Maneux Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905774v1
Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs Author(s): Mario Weib, Kumar Sahoo Amit, Cristian Raya, Marco Santorelli, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00905765v1
Impact of Back-end-of-line on Thermal Impedance in SiGe HBTs Author(s): Kumar Sahoo Amit, Sébastien Fregonese, Mario Weib, Marco Santorelli, Nathalie Malbert, Thomas Zimmer Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00906141v1
High frequency noise characterisation of graphene FET Device Author(s): D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, H. Happy Year of publication: 2013 Journal: DOI: 10.1109/MWSYM.2013.6697561 HAL link: https://hal.science/hal-00944030v1
High frequency epitaxial graphene fields effect transistors (GFET) on SiC Author(s): D. Mele, E. Pichonat, S. Fregonese, A. Ouerghi, H. Happy Year of publication: 2012 Journal: DOI: HAL link: https://hal.science/hal-00801050v1
Pulsed I(V) - Pulsed RF Measurement System for Microwave Device Characterization with 80ns/45GHz Author(s): M. Weiss, Sebastien Fregonese, M. Santorelli, A. Kumar Sahoo, C. Maneux, T. Zimmer Year of publication: 2012 Journal: DOI: HAL link: https://hal.science/hal-01002174v1
Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz Author(s): Mario Weis, Sebastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer Year of publication: 2012 Journal: DOI: HAL link: https://hal.science/hal-00978793v1
Electrical compact modelling of graphene transistors Author(s): Sebastien Fregonese, Huu-Nha Nguyen, Cédric Majek, Cristell Maneux, Henri Happy, Nan Meng, Thomas Zimmer Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00588825v1
Electro-thermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs Author(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Nathalie Malbert, Thomas Zimmer Year of publication: 2011 Journal: DOI: 10.1109/BCTM.2011.6082746 HAL link: https://hal.science/hal-00669443v1
NQS modelling with HiCuM: What works, what doesn't Author(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00590790v1
Modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations Author(s): Arkaprava Bhattacharyya, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2011 Journal: DOI: 10.1109/BCTM.2011.6082748 HAL link: https://hal.science/hal-00669452v1
FPGA design with double-gate carbon nanotube transistors Author(s): Haykel Ben Jamma, Pierre-Emmanuel Gaillardon, Sebastien Fregonese, Michele de Marchi, Giovanni de Micheli, Thomas Zimmer, Fabien Clermidy, Ian O'Connor Year of publication: 2011 Journal: DOI: 10.1149/1.3567706 HAL link: https://hal.science/hal-00669403v1
Carbon-based Schottky barrier transistor: From compact modeling to digital circuit applications Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer, Nouri Masmoudi Year of publication: 2011 Journal: DOI: 10.1109/DTIS.2011.5941435 HAL link: https://hal.science/hal-00669416v1
Electrical compact modelling of graphene transistors Author(s): S. Fregonese, H.N. Nguyen, C. Majek, C. Maneux, H. Happy, N. Meng, T. Zimmer Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00799969v1
Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation Author(s): Kumar Sahoo Amit, Sebastien Fregonese, Mario Weib, Nathalie Malbert, Thomas Zimmer Year of publication: 2011 Journal: DOI: 10.1109/ESSDERC.2011.6044190 HAL link: https://hal.science/hal-00669428v1
NQS effect and implementation in compact transistor model Author(s): Arkaprava Bhattacharyya, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00590784v1
Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance Author(s): Mahmoud Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00584860v1
Modeling of NPN-SiGe-HBT Electrical Performance Improvement through Employing Si3N4 Strain in the Collector Region Author(s): M. Al-Sa'Di, S. Fregonese, C. Maneux, T. Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00526042v1
Benchmarking of HBT Models for InP Based DHBT Modeling Author(s): S. Ghosh, T. Zimmer, B. Ardouin, C. Maneux, S. Frégonèse, F. Marc, B. Grandchamp, G.A. Koné Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00488687v1
From nanoscale technology scenarios to compact device models for ambipolar devices Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00589113v1
Optically-Gated CNTFET compact model including source and drain Schottky barrier Author(s): Si-Yu Liao, Montassar Najari, Cristell Maneux, Sebastien Fregonese, Thomas Zimmer, H. Mnif, N. Masmoudi Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00584845v1
A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Author(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00588829v1
TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's Author(s): Mahmoud Al-Sa'Di, V. d'Alessandro, Sebastien Fregonese, S.M. Hong, C. Jungemann, Cristell Maneux, I. Marano, A. Pakfar, N. Rinaldi, G. Sasso, M. Schröter, A. Sibaja-Hernandez, C. Tavernier, G. Wedel Year of publication: 2010 Journal: Conference Proceedings DOI: HAL link: https://hal.science/hal-00584869v1
TCAD Modeling of NPN-SiGe-HBT Electrical Performance Improvement Through Extrinsic Stress Layer Author(s): M. Al-Sa'Di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00488682v1
A compact model for double gate carbon nanotube FET Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2010 Journal: DOI: HAL link: https://hal.science/hal-00584874v1
Investigation of Electrical BJT Performance through Extrinsic Stress Layer Using TCAD Modeling Author(s): M. Al-Sa'Di, S. Fregonese, C. Maneux, T. Zimmer Year of publication: 2009 Journal: DOI: HAL link: https://hal.science/hal-00399917v1
Modélisation compacte et transport balistique Author(s): Cristell Maneux, Sebastien Fregonese, T. Zimmer Year of publication: 2009 Journal: DOI: HAL link: https://hal.science/hal-00399887v1
Analytical modeling of the tunneling current in schottky barrier carbon nanotube field effect transistor using the verilog-a language Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, Nouri Masmoudi Year of publication: 2009 Journal: DOI: HAL link: https://hal.science/hal-00674301v1
A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET Author(s): Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2009 Journal: DOI: 10.1109/ISDRS.2009.5378241 HAL link: https://hal.science/hal-00450128v1
Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor Author(s): Si-Yu Liao, Cristell Maneux, Vincent Pouget, Sebastien Fregonese, Thomas Zimmer Year of publication: 2009 Journal: DOI: HAL link: https://hal.science/hal-00399897v1
Toward compact model of Optical-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) Author(s): Si-Yu Liao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00337487v1
Germanium Base Profile Optimization to Improve fT Characteristics at High Injection in RF Power SiGe:C HBTs Author(s): P.M. Mans, S. Jouan, A. Pakfar, S. Fregonese, F. Brossard, A. Perrotin, C. Maneux, T. Zimmer Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00327463v1
Compact Model of a Dual Gate CNTFET: Description and Circuit Application Author(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2008 Journal: DOI: 10.1109/TED.2007.902719 HAL link: https://hal.science/hal-00319955v1
[Invited] Carbon nanotube FETs for high frequency applications : overview and state of the art Author(s): H. Happy, L. Nougaret, Gilles Dambrine, N. Chimot, Vincent Derycke, J.P. Bourgoin, T. Zimmer, C. Maneux, S. Fregonese Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00811078v1
COMPACT MODELING OF THE SCHOTTKY BARRIER JUNCTION IN THE CARBON NANOTUBE FIELD EFFECT TRANSISTOR Author(s): Montassar Najari, Sébastien Frégonèse, Cristell Maneux, Thomas Zimmer, Hasséne Mnif, Nouri Masmoudi Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00337489v1
Towards Compact Modelling of Schottky Barrier CNTFET Author(s): Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, N. Masmoudi Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00288040v1
A Charge Approach for a Compact Model of Dual Gate CNTFET Author(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2008 Journal: DOI: HAL link: https://hal.science/hal-00288046v1
Modèle compact du transistor double grille CNTFET Author(s): Johnny Goguet, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer Year of publication: 2007 Journal: DOI: HAL link: https://hal.science/hal-00197536v1
Investigation of Ge content in the BC transition region with respect to transit frequency Author(s): Pierre-Marie Mans, Sebastien Jouan, A. Pakfar, Sebastien Fregonese, F. Brossard, A. Perrotin, Cristell Maneux, Thomas Zimmer Year of publication: 2007 Journal: DOI: HAL link: https://hal.science/hal-00189397v1
Analysis of CNTFET physical compact model Author(s): Cristell Maneux, Johnny Goguet, Sebastien Fregonese, Thomas Zimmer, Hughes Cazin d'Honincthun, S. Galdin-Retailleau Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-00181481v1
Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI Author(s): Alain Chantre, Laurence Boissonnet, Gregory Avenier, Gael Borot, Pierre Bouillon, Florence Brossard, Pascal Chevalier, Florence Deleglise, Didier Dutartre, Julien Duvernay, Sebastien Fregonese, Fabienne Judong, Roland Pantel, Andre Perrotin, Bruno Rauber, Laurent Rubaldo, Fabienne Saguin, Thierry Schwartzmann, Benoit Vandelle, Thomas Zimmer Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-00181206v1
JFET test structures for monitoring strain-enhanced mobility Author(s): L. Shi, G. Lorito, Sebastien Fregonese, Vladimir Jovanovic, L. K. Nanver Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-00181691v1
3D Simulation Study of Strained CMOS based on a disposable SiGe Dot Technology Author(s): Sebastien Fregonese, Yan Zhuang, Joachim Norbert Burghartz Year of publication: 2006 Journal: DOI: HAL link: https://hal.science/hal-00181694v1
A self-aligned vertical HBT for thin SOI SiGeC BiCMOS Author(s): Gregory Avenier, Thierry Schwartzmann, Pascal Chevalier, Benoit Vandelle, Laurent Rubaldo, Didier Dutartre, L. Boissonnet, Fabienne Saguin, Roland Pantel, Sébastien Fregonese, Cristell Maneux, Thomas Zimmer, A. Chantre Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181977v1
Study of a 3D thermal characterization of SiGe HBTS Author(s): Pierre-Yvan Sulima, Jean Luc Battaglia, Thomas Zimmer, Sébastien Fregonese, D. Celi Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181990v1
A Hicum SOI extension Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181989v1
Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181980v1
A Transient Measurement Setup for Electro-thermal Characterisation for SiGe HBTs Author(s): Pierre-Yvan Sulima, Thomas Zimmer, Helene Beckrich, Jean Luc Battaglia, Sébastien Fregonese, D. Celi Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181978v1
A transit time model for thin SOI Si/SiGe HBT Author(s): Sébastien Fregonese, Gregory Avenier, Cristell Maneux, A. Chantre, Thomas Zimmer Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181979v1
Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI Author(s): Gregory Avenier, Pascal Chevalier, Benoit Vandelle, Damien Lenoble, Fabienne Saguin, Sébastien Fregonese, Thomas Zimmer, A. Chantre Year of publication: 2005 Journal: DOI: HAL link: https://hal.science/hal-00181981v1
Scalable Substrate Modeling based on 3D Physical Simulation Substrat Author(s): Sébastien Fregonese, D. Celi, Thomas Zimmer, Cristell Maneux Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181985v1
Barrier effects in SiGe HBT: Modeling of high-injection base current increase Author(s): Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181982v1
Scalable bipolar transistor modelling with HICUM L0 Author(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181991v1
Scalable Bipolar Transistor Modelling with HICUM Author(s): Sébastien Fregonese, Dominique Berger, Thomas Zimmer, Cristell Maneux, Pierre-Yvan Sulima, D. Celi Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181984v1
Representation of the SiGe HBT's Thermal Impedance by Linear and Recursive Networks Author(s): Hassene Mnif, Jean Luc Battaglia, Sébastien Fregonese, Thomas Zimmer Year of publication: 2004 Journal: DOI: HAL link: https://hal.science/hal-00181983v1
Analytical model for the self-heating effect in SiGe HBTs and its network representationAnalytical model for the self-heating effect in SiGe HBTs and its network representation Author(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00181986v1
Bipolar modeling and selfheating: An Equivalent Network representation For The Thermal Spreading Impedance In SiGe HBTs Author(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00181987v1
Modélisation thermique des TBH SiGe destinés à des applications radiofréquences Author(s): Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00181988v1
Obtaining isothermal data with standard measurement equipment Author(s): Thomas Zimmer, Sebastien Fregonese, Hassene Mnif, Bertrand Ardouin Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00189389v1
Simulation physique de TBH SiGe : Etude du temps de transit sur une structure 1D et 2D Author(s): Sébastien Fregonese, Cristell Maneux, Hassene Mnif, Thomas Zimmer Year of publication: 2003 Journal: DOI: HAL link: https://hal.science/hal-00181992v1

Invited lectures (26)

Challenges in characterizing BiCMOS SiGe HBT technologies for FOM evaluation and compact modelling Author(s): Sebastien Fregonese, Magali de Matos, Thomas Zimmer Year of publication: 2024 Journal: DOI: HAL link: https://hal.science/hal-04736846v1
WM-02 Mechanical Investigations for High Frequency Probe Design Author(s): Sebastien Fregonese, Tarek Bouzar, Jean-Daniel Arnould, Simon Joly, Thomas Zimmer Year of publication: 2024 Journal: DOI: HAL link: https://hal.science/hal-04736870v1
Electro-Thermal Investigation of SiGe HBTs: A Review Author(s): Thomas Zimmer, Anjan Chakravorty, Sébastien Fregonese Year of publication: 2023 Journal: DOI: 10.1109/BCICTS54660.2023.10310701 HAL link: https://hal.science/hal-04410097v1
Challenges of on-wafer Sparameters characterization of advanced SiGe HBTs at very high frequencies Author(s): Sebastien Fregonese, Thomas Zimmer Year of publication: 2023 Journal: DOI: HAL link: https://hal.science/hal-04411311v1
Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited) Author(s): Sebastien Fregonese, Mukherjee Chhandak, Holger Rucker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, François Marc, Cristell Maneux, Thomas Zimmer Year of publication: 2021 Journal: DOI: 10.1109/BCICTS50416.2021.9682476 HAL link: https://hal.science/hal-03408053v1
Influence of Calibration Methods and RF Probes on the RF Characterization of 28FD-SOI MOSFET Author(s): Karthi Pradeep, Marina Deng, Benjamin Dormieu, Patrick Scheer, Magali De Matos, Thomas Zimmer, Sebastien Fregonese Year of publication: 2021 Journal: DOI: 10.1109/LAEDC51812.2021.9437917 HAL link: https://hal.science/hal-03273422v1
[Invited] Graphene for radio frequency electronics Author(s): Wei Wei, Fadil Dalal, Sebastien Fregonese, Wlodek Strupinski, Emiliano Pallecchi, Henri Happy Year of publication: 2020 Journal: DOI: 10.1109/LAEDC49063.2020.9073546 HAL link: https://hal.science/hal-02920359v1
On wafer small signal characterization beyond 100 GHz for compact model assessment Author(s): Sebastien Fregonese, Marina Deng, Marco Cabbia, Chandan Yadav, Soumya Ranjan Panda, Thomas Zimmer Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02386275v1
[Invited] Modelling and Simulation of Heterojunction Bipolar Transistors for THz Applications Modeling and characterization of HBT in THz range Author(s): Thomas Zimmer, Marina Deng, Mukherjee Chhandak, Cristell Maneux, Sebastien Fregonese Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02453238v1
Caractérisation RF de transistors bipolaires à hétérojonction SiGe jusqu’à 500 GHz Author(s): Marco Cabbia, Marina Deng, Chandan Yadav, Sebastien Fregonese, Magalie de Matos, Thomas Zimmer Year of publication: 2019 Journal: DOI: HAL link: https://hal.science/hal-02512232v1
[Invited] 2D RF Electronics: from devices to circuits - challenges and applications Author(s): Dalal Fadil, Wei Wei, Emiliano Pallecchi, M Anderson, Jan Stake, Marina Deng, Sebastien Fregonese, Thomas Zimmer, Henri Happy Year of publication: 2018 Journal: DOI: 10.1109/DRC.2018.8442190 HAL link: https://hal.science/hal-02372652v1
Measurement issues of on-Silicon de- embedding test structures in the Sub-THz range Author(s): Chandan Yadav, Marina Deng, Sebastien Fregonese, Magali de Matos, Thomas Zimmer Year of publication: 2018 Journal: DOI: HAL link: https://hal.science/hal-02380246v1
High frequency and noise performance of GFETs Author(s): W. Wei, D. Fadil, Marina Deng, S. Fregonese, T. Zimmer, E. Pallecchi, Gilles Dambrine, H. Happy Year of publication: 2017 Journal: DOI: 10.1109/ICNF.2017.7985969 HAL link: https://hal.science/hal-01695812v1
Beyond 100 GHz: High frequency device characterization for THz applications Author(s): S. Fregonese, M Deng, M Potereau, M. de Matos, T. Zimmer Year of publication: 2017 Journal: DOI: HAL link: https://hal.science/hal-02379050v1
BEOL-investigation on selfheating and SOA of SiGe HBT Author(s): Rosario d'Esposito, Sebastien Fregonese, Thomas Zimmer Year of publication: 2016 Journal: DOI: HAL link: https://hal.science/hal-01399956v1
Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range Author(s): Bertrand Ardouin, Michael Schroter, Thomas Zimmer, Klaus Aufinger, Ulrich Pfeiffer, Christian Raya, A. Mukherjee, S. Malz,, Sebastien Fregonese, Rosario d'Esposito, Magali de Matos Year of publication: 2015 Journal: DOI: 10.1109/CSICS.2015.7314492 HAL link: https://hal.science/hal-01235946v1
On the Use of Single-Crystals of Organic Semiconductors in Novel Electronic Devices Author(s): Guillaume Wantz, Stéphane Bachevillier, Marcos Reyes-Martinez, Cédric Ayela, Sebastien Fregonese, Lionel Hirsch, Alejandro Briseno Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-01228731v1
Graphene FET evaluation for RF and mmWave circuit applications Author(s): Sebastien Fregonese, Jorgue Daniel Aguirre Morales, Magali de Matos, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: DOI: 10.1109/ISCAS.2015.7169298 HAL link: https://hal.science/hal-01235960v1
Substrate-coupling effect in BiCMOS technology for millimeter wave applications Author(s): Sebastien Fregonese, Rosario d'Esposito, Magali de Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer Year of publication: 2015 Journal: DOI: 10.1109/NEWCAS.2015.7181981 HAL link: https://hal.science/hal-01235958v1
The Organic Bipolar Heterojunction Transistor (OHBT) Author(s): Guillaume Wantz, Marco Pereira, Cédric Ayela, Sébastien Fregonese, Alejandro Briseno, Lionel Hirsch, Damien Thuau Year of publication: 2015 Journal: DOI: HAL link: https://hal.science/hal-02505589v1
The potential of graphene for RF applications Author(s): Thomas Zimmer, Sebastien Fregonese, Cristell Maneux Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01002132v1
Graphene electronics: how far from industrial applications Author(s): Thomas Zimmer, Sebastien Fregonese Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-01002135v1
Electro-Thermal Investigation and Modeling of Sige Hbt High-Speed Devices Author(s): Thomas Zimmer, Mario Weiss, Cristell Maneux, Sebastien Fregonese Year of publication: 2014 Journal: DOI: HAL link: https://hal.science/hal-00987211v1
Electro-Thermal Device Characterization & Modelling Author(s): Sebastien Fregonese, Amit Kumar Sahoo, Mario Weib, Cristell Maneux Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-00987256v1
The potential of graphene for electronics Author(s): T. Zimmer, S. Fregonese, Cristell Maneux Year of publication: 2013 Journal: DOI: HAL link: https://hal.science/hal-01002124v1
Anything else beyond CMOS? Author(s): Sebastien Fregonese, Maneux Cristell, Zimmer Thomas Year of publication: 2011 Journal: DOI: HAL link: https://hal.science/hal-00987253v1

Send a email to Sébastien FREGONESE :

    Contact our team

    If you have a request or questions about the laboratory, please contact our team.